Publications - DO NOT EDIT
http://hdl.handle.net/10106/5040
2024-03-19T06:45:08Z
2024-03-19T06:45:08Z
Coupled Bilayer Photonic Crystal Slab Electro-Optic Spatial Light Modulators
Shuai, Yi-Chen
Zhao, Deyin
Liu, Yonghao
Stambaugh, Corey
Lawall, John
Zhou, Weidong
http://hdl.handle.net/10106/27315
2023-11-20T19:54:40Z
Coupled Bilayer Photonic Crystal Slab Electro-Optic Spatial Light Modulators
Shuai, Yi-Chen; Zhao, Deyin; Liu, Yonghao; Stambaugh, Corey; Lawall, John; Zhou, Weidong
We demonstrate here a surface-normal ultracompact Fano resonance electro-optic spatial light modulator employing a stacked photonic crystal membrane capacitor-like structure. Vertically coupled optical resonance near 1.5 μm was observed, and both blue and red spectral shifts were achieved by means of appropriate electrical bias. A 200-MHz
modulation bandwidth was obtained on a device with an 80 μm × 80 μm mesa area, while bandwidths in the gigahertz range are expected by shrinking the mesa lateral size down to 20 μm × 20 μm. We fabricated 6 × 6 arrays with different mesa sizes on a silicon-on-insulator platform, illustrating the potential of these devices in vertically integrated photonic
technologies and for high-speed spatial light modulations.
Article 7101411
Optical Refractive Index Sensing Based on High-Q Bound States in the Continuum in Free-Space Coupled Photonic Crystal Slabs
Liu, Yonghao
Zhou, Weidong
Sun, Yuze
http://hdl.handle.net/10106/27015
2023-11-20T19:49:52Z
2017-08-11T00:00:00Z
Optical Refractive Index Sensing Based on High-Q Bound States in the Continuum in Free-Space Coupled Photonic Crystal Slabs
Liu, Yonghao; Zhou, Weidong; Sun, Yuze
High sensitivity (S) and high quality factor (Q) are desirable to achieve low detection limit in label-free optical sensors. In this paper, we theoretically demonstrate that single-layer and coupled bi-layer photonic crystal slabs (PCS) possess simultaneously high S and high Q near the bound states in the continuum (BIC). We theoretically achieved S > 800 nm/RIU and Q > 107 in refractive index sensing in the 1400–1600 nm telecom optical wavelength bands. We experimentally demonstrated an S of 94 nm/RIU and a Q of 1.2 x 104, with a detection limit of 6 X10 -5 refractive index unit. These sensor designs can find applications in biochemical sensing, environmental
monitoring, and healthcare.
2017-08-11T00:00:00Z
Resonance control of membrane reflectors with effective index engineering
Zhou, Weidong
Chuwongin, Santhad
Qiang, Zexuan
Chen, Li
Pang, Huiqing
Ma, Zhenqiang
Yang, Hongjun
http://hdl.handle.net/10106/5052
2023-10-19T18:05:26Z
2009-07-14T00:00:00Z
Resonance control of membrane reflectors with effective index engineering
Zhou, Weidong; Chuwongin, Santhad; Qiang, Zexuan; Chen, Li; Pang, Huiqing; Ma, Zhenqiang; Yang, Hongjun
We report here broadband membrane reflectors based on Fano resonances in patterned silicon
nanomembranes. Resonance control of the reflectors was realized either by partially removing
buried oxide layer underneath the device layer or by controlled SiO2 film deposition on top of the
devices. Both blueshifts and redshifts were demonstrated with a turning range of 50 nm for a center
wavelength of 1550 nm. These results demonstrate practical postprocess means for Fano resonance
engineering for both narrowband filters and ultracompact broadband reflectors. © 2009 American
Institute of Physics.
2009-07-14T00:00:00Z
Large-area InP-based crystalline nanomembrane flexible photodetectors
Zhou, Weidong
Yang, Weiquan
Yang, Hongjun
Qin, Guoxuan
Ma, Zhenqiang
Berggren, Jesper
Hammar, Mattias
Soref, Richard
http://hdl.handle.net/10106/5051
2023-10-19T18:29:27Z
2010-03-25T00:00:00Z
Large-area InP-based crystalline nanomembrane flexible photodetectors
Zhou, Weidong; Yang, Weiquan; Yang, Hongjun; Qin, Guoxuan; Ma, Zhenqiang; Berggren, Jesper; Hammar, Mattias; Soref, Richard
Large-area (3x3 mm2) flexible photodetectors were realized, based on crystalline InP
semiconductor nanomembranes transferred to flexible polyethylene terephthalate substrates. Very
low dark current a few microamperes and high responsivity 0.12 A/W were demonstrated for
flexible InP p-i-n photodetectors. Bending characteristics were also investigated for this type of
flexible crystalline semiconductor photodetector, and it was found that, whereas the dark current was
independent of bending radii, the photocurrent degraded, depending on the bending radii. © 2010
American Institute of Physics.
2010-03-25T00:00:00Z