Jiechao Jiang
http://hdl.handle.net/10106/24257
2024-03-27T05:01:27Z
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PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+[delta] thin films
http://hdl.handle.net/10106/25410
PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+[delta] thin films
Liu, Jian; Collins, Gregory; Liu, Ming; Chen, C. L.; Jiang, Jiechao; Meletis, Efsftathios; Zhang, Qingyu; Dong, Chuang
**Please note that the full text is embargoed** ABSTRACT: Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were
discovered in high temperature and reducing environments during the reduction and reoxidation
process. A reproducible resistance response of over 99% was achieved in the films during a change
of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at,
low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high
temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a
chemical sensor device for reducing environments at high temperature. © 2010 American Institute
of Physics. doi:10.1063/1.3484964 Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were
discovered in high temperature and reducing environments during the reduction and reoxidation
process. A reproducible resistance response of over 99% was achieved in the films during a change
of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at,
low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high
temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a
chemical sensor device for reducing environments at high temperature. © 2010 American Institute
of Physics. doi:10.1063/1.3484964
2010-09-01T00:00:00Z