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An Innovative Epitaxial Growth Method For Minimizing Dislocations In Thin-film Quantum-dot Optoelectronic And Photovoltaic Device Applications
(Materials Science & Engineering, 2012-07-25)
A new buffer layer method for epitaxial growth of lattice-mismatched semiconductor quantum-dots based p-i-n structures is presented. To our knowledge this is the first instance of a dislocation-reduction approach that ...