Now showing items 1-6 of 6
Surface texturing by solution deposition for omnidirectional antireflection
(Original publisher: Applied Physics LettersUniversity of Texas at Arlington, 2007-08)
Surface texturing by solution deposition has been developed for antireflection in solar cells. The surface texture is formed by a monolayer of microscale silica particles partially immersed into a spin-on-glass film with ...
Solution-processed omnidirectional antireflection coatings on amorphous silicon solar cells
(Original publisher: Journal of Applied PhysicsUniversity of Texas at Arlington, 2009-05)
Solution-processed spherical surface textures are demonstrated on commercial amorphous silicon solar cells. The texture is formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass ...
Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ...
pH-dependence of conduction type in cuprous oxide synthesized from solution
The formation of native point defects in cuprous oxide, Cu2O, synthesized from solution has been studied by first-principles calculations. Although p-type conduction is obtained in Cu2O synthesized from vacuum regardless ...
Microstructured surface design for omnidirectional antireflection coatings on solar cells
(Original publisher: American Institute of Physics, 2007-11-27)
We recently demonstrated a new process for the formation of partially spherical structures as an omnidirectional antireflection coating (omni-AR). In this paper, we report the simulation results of the angular and spectral ...
Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)
The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...