Now showing items 1-5 of 5

    • Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole 

      Tao, Meng; Ali, Muhammad Yusuf (AIPDepartment of Electrical Engineering, 2007-05-21)
      Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ...
    • Microstructured surface design for omnidirectional antireflection coatings on solar cells 

      Zhou, Weidong; Chen, Li; Yang, Hongjun; Tao, Meng (Original publisher: American Institute of PhysicsDepartment of Electrical Engineering, 2007-11-27)
      We recently demonstrated a new process for the formation of partially spherical structures as an omnidirectional antireflection coating (omni-AR). In this paper, we report the simulation results of the angular and spectral ...
    • pH-dependence of conduction type in cuprous oxide synthesized from solution 

      Tao, Meng; Wang, Longcheng; Zhang, Qiming; Wu, Dangxin; Wang, Weichao (AIP;Department of Physics, University of Texas at ArlingtonDepartment of Electrical Engineering, University of Texas at Arlington, 2010-06-28)
      The formation of native point defects in cuprous oxide, Cu2O, synthesized from solution has been studied by first-principles calculations. Although p-type conduction is obtained in Cu2O synthesized from vacuum regardless ...
    • Solution-processed omnidirectional antireflection coatings on amorphous silicon solar cells 

      Zhou, Weidong; Wang, Yuehui; Tummala, Rajesh; Chen, L.; Guo, L. Qing; Tao, Meng (Original publisher: Journal of Applied PhysicsUniversity of Texas at ArlingtonDepartment of Electrical Engineering, NanoFAB Center, 2009-05)
      Solution-processed spherical surface textures are demonstrated on commercial amorphous silicon solar cells. The texture is formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass ...
    • Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001) 

      Tao, Meng; Xu, Yuqing; Kirk, Wiley P.; Maldonado, Eduardo; Udeshi, Darshak (AIPDepartment of Electrical Engineering, NanoFAB Center, University of Texas at ArlingtonTexas Instruments, 2004-01-26)
      The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...