A High Fill Factor CMOS Image Sensor For IR Camera Applications
MetadataShow full item record
In this thesis, a unit cell for high-SNR applications is presented. The proposed circuit is significantly smaller than other circuits that perform dark current subtraction because less circuitry is used inside the unit cell. The proposed circuit uses only two transistors and one resistor inside each unit cell to suppress the dark current. The size of the circuit in the layout is 25 um x 25 µm. With this new unit cell and routing approach, the size of the unit cell was reduced by 300% compared to other circuits which also suppress dark current.