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1/f Noise In Hafnium Based High-k Gate Dielectric MOSFETS And A Review Of Modeling
(Electrical Engineering, 2008-04-22)For next generation MOSFETs, the constant field scaling rule dictates a reduction in the gate oxide thickness among other parameters. Consequently, gate leakage current becomes a serious issue with very thin SiO2 that ... -
100 Main Street
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100 Main Street
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100 Main Street
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100 Main Street
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1000 W. Main Street
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1000 W. Main Street
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1000 W. Main Street
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1000 W. Main Street
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1000 W. Main Street
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1000 W. Main Street
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1001 East Hubbard Street
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1001 East Hubbard Street
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1001 East Hubbard Street
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1001 East Hubbard Street
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1008 W. Main Street
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1008 W. Main Street
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