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Temperature And Frequency Dependence Of Thermal Impedance In Dielectrically Isolated SiGe HBTs
(Electrical Engineering, 2011-07-14)
Silicon Germanium (SiGe) heterojunction bipolar transistors (HBTs) have been designed to cater the demand of high speed circuits having applications in wireless and optical communication. Due to higher cut-off frequencies ...
Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop
(2016-05-24)
Silicon Germanium (SiGe) hetero-junction bipolar transistors (HBTs) have been designed to cater the demand of high speed circuits having speed applications in wireless, optical communication and space electronics. Due to ...