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INVESTIGATION OF THE CHANNEL HOT CARRIER (CHC) STRESSING EFFECTS AND IDENTIFICATION OF THE STRESS-INDUCED OXIDE TRAPS LEADING TO RTS IN PMOSFETS
(2020-11-12)
Electrical stressing mechanisms are responsible for the generation of stress-induced gate SiO2 defects, in addition to the presence of process-induced oxide traps, in MOSFETs. Random telegraph signal (RTS) can be utilized ...