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Measurement And Modeling Of 1/f Noise In MOSFET Devices With High-κ Material As The Gate Dielectric
(Electrical Engineering, 2008-04-22)
A new 1/f noise model has been developed for MOSFET devices with high-κ gate stack. To investigate the impacts of nitridation, MOSFETs with nitrided high-κ dielectric was used. These devices were provided by Texas Instruments, ...