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Simulation And Characterization Of ZnSe/BeTe Resonant Tunneling Diode On Silicon
(Electrical Engineering, 2007-08-23)
ZnSe/BeTe resonant tunneling diodes were grown on silicon with a ZnxBe1-xTe buffer layer using MBE (Molecular Beam epitaxy).These devices were processed and characterized. The devices showed multiple NDR (negative differential ...