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Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop
(2016-05-24)
Silicon Germanium (SiGe) hetero-junction bipolar transistors (HBTs) have been designed to cater the demand of high speed circuits having speed applications in wireless, optical communication and space electronics. Due to ...
LOW DIMENSIONAL SEMICONDUCTING NANOSTRUCTURES: STABILITY, TRENDS AND PROMISES
(2016-05-10)
Systematic studies of low dimensional semiconducting nanostructures have been performed. In particular, silicon-germanium (SiGe) armchair type nanotubes, and both zigzag and armchair type nanoribbons were used to represent ...