Show simple item record

dc.contributor.authorSahebi, Parisaen_US
dc.date.accessioned2013-10-22T23:59:58Z
dc.date.available2013-10-22T23:59:58Z
dc.date.issued2013-10-22
dc.date.submittedJanuary 2013en_US
dc.identifier.otherDISS-12345en_US
dc.identifier.urihttp://hdl.handle.net/10106/23933
dc.description.abstractFerroelectric BaTiO₃(BTO) thin films were deposited on polycrystalline nickel disks and silicon wafer substrates by rf magnetron sputtering. Nickel oxide (NiO) and nanocrystalline nickel (nc-Ni) layers were used as interfacial buffer layers. Microstructural studies with X-ray diffraction and transmission electron microscopy reveal that the BTO films deposited at temperatures lower than 700℃ have an amorphous structure. However, the BTO films sputtered at temperatures higher than 700℃ are partially crystalline. BTO films have a good and continuous interface with both interfacial layers with no interdiffusion or reaction with the substrates. In the case of BTO deposition with nc-Ni interlayer at higher deposition temperature of 800℃, a thin NiO layer forms between the nc-Ni and BTO films. Having nc-Ni as an interfacial layer enhances surface morphology and decreases surface roughness. This study shows that nc-Ni can act as a proper interfacial layer between a ceramic like BTO and the metallic substrates and is a better alternative for NiO buffer layer.en_US
dc.description.sponsorshipMeletis, Efstathiosen_US
dc.language.isoenen_US
dc.publisherMaterials Science & Engineeringen_US
dc.titleFabrication And Characterization Of Barium Titanate Thin Film On Polycrystalline Nickel Substrateen_US
dc.typeM.S.en_US
dc.contributor.committeeChairMeletis, Efstathiosen_US
dc.degree.departmentMaterials Science & Engineeringen_US
dc.degree.disciplineMaterials Science & Engineeringen_US
dc.degree.grantorUniversity of Texas at Arlingtonen_US
dc.degree.levelmastersen_US
dc.degree.nameM.S.en_US


Files in this item

Thumbnail


This item appears in the following Collection(s)

Show simple item record