Browsing Department of Materials Science and Engineering by Author "Yum, Kyungsuk"
Now showing items 1-6 of 6
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An Investigation on the Corrosion Inhibition of Brazing Cu-Ag Alloy
Rahmani, Hooman (2020-08-25)Adsorption and inhibition behavior of 1,2,3-benzotriazole (BTA) and 2,5-dimercapto-1,3,4-thiadiazole (DMTD) on brazing Cu-Ag alloy was studied in deionized water using corrosion potential measurement, potentiodynamic ... -
FABRICATION OF SOLID POLYMERIC 3D SHAPES FROM PROGRAMMABLE FLAT HYDROGEL SHEETS
Khadse, Ninad Vilas; 0000-0003-2616-5375 (2018-05-24)Modern methods of fabricating three-dimensional (3D) objects include sheet metal forming, thermoforming, and additive manufacturing among others. These methods have their own advantages and disadvantages regarding scalability, ... -
QUANTITATIVE ANALYSIS OF MINERAL/MATRIX TO EVALUATE GENETICALLY ALTERED BONE WITH INFRARED SPECTROSCOPY AND X-RAY SPECTRAL IMAGING
Yadav, Sunil Balasaheb; 0000-0002-9034-2252 (2018-05-22)This thesis focuses on the characterization of bone with the help of Fourier Transform Infrared Spectroscopy and Energy Dispersive Spectroscopy. Such analysis of the physics and chemistry of biomaterials is vital to resolve ... -
SINGLE STEP FABRICATION OF SHAPE MORPHING 3D SURFACES
Nojoomi, Amirali; 0000-0002-2868-6126 (2020-06-04)Shape-changing materials that can adopt programmable 3-dimensional (3D) shapes offer promise for a wide range of applications. Form the formation of the leaves and flowers to the shaping of complex organs, the analogues ... -
Study of Conduction Behavior in Dielectrics in Chip Level Interconnects: Detection of Defects in Al/SiO2 Interconnects
Lu, Po-Cheng; 0000-0003-3565-9449 (2018-12-18)This dissertation presents four different electrical measurement techniques to detect structural defects in Al/SiO2 interconnects. These techniques, namely 1) polarity dependence measurement, 2) current voltage measurement, ... -
Study Of New Transistor Architecture With Energy Filtering
Eluagu, Nnaemeka McDonald (2020-08-24)The thermodynamic limit of the subthreshold slope to 60mV/decade at 300K forces MOSFET devices to use high supply voltages (> 0.5V) and therefore dissipate a lot of energy. This physical limitation of transistors is a ...