Browsing Department of Materials Science and Engineering by Subject "Fermi-Dirac excitation"

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    • Study Of New Transistor Architecture With Energy Filtering 

      Eluagu, Nnaemeka McDonald (2020-08-24)
      The thermodynamic limit of the subthreshold slope to 60mV/decade at 300K forces MOSFET devices to use high supply voltages (> 0.5V) and therefore dissipate a lot of energy. This physical limitation of transistors is a ...