Browsing Department of Materials Science and Engineering by Subject "Phase field modeling"
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PHYSICAL MODELING OF FILAMENT GROWTH AND RESISTIVE SWITCHING IN METAL OXIDE-BASED RRAM
(2022-12-15)Metal oxide-based resistive random-access memories (RRAM) exhibit several excellent performances, such as nanosecond switching speed, large write-erase endurance, and long retention time, and can potentially replace the ...