PO2 dependant resistance switch effect in highly epitaxial (LaBa)Co2O5+[delta] thin films

Abstract

**Please note that the full text is embargoed** ABSTRACT: Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature. © 2010 American Institute of Physics. doi:10.1063/1.3484964 Giant resistance switching behavior in mixed conductive LaBaCo2O5+ epitaxial thin film were discovered in high temperature and reducing environments during the reduction and reoxidation process. A reproducible resistance response of over 99% was achieved in the films during a change of 4% H2 /96% N2 to oxygen at temperature range of 400– 780 °C. The results indicate that at, low oxygen partial pressure, the extension of oxygen deficiency is an essential factor to the high temperature physical properties of LaBaCo2O5+ and demonstrates its potential application as a chemical sensor device for reducing environments at high temperature. © 2010 American Institute of Physics. doi:10.1063/1.3484964