Browsing Department of Electrical Engineering by Author "Carter, Ronald L."
Now showing items 1-19 of 19
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Analysis And Characterization Of Thermal Effects In Analog Circuits
Chaugule, Abhijit Avinash (Electrical Engineering, 2007-08-23)Dielectrically Isolated Bipolar Junction Transistors (DIBJTs) are used in industry for high speed and high power applications. These devices suffer from thermal heating and are subjected to change in their characteristics. ... -
Analysis And Modeling Of Self Heating In Silicon Germanium Heterojunction Bipolar Transistors
Bastin, Kevin (Electrical Engineering, 2009-09-16)Silicon Germanium (SiGe) hetero junction bipolar transistors (HBTs) have established itself as strong technology contender for a host of circuit applications including analog, mixed signal and Radio Frequency (RF). Due to ... -
Automation Of Thermal Model Extraction And Optimization
Oji, Obiorah (Electrical Engineering, 2008-09-17)Semiconductor device model optimization is highly beneficial; it improves the accuracy with which we can predict the performance of real devices and whole circuits before they are fabricated. This helps save time and money ... -
Characterization Of Sub-10 nm Pores In Silicon-dioxide
Billo, Joseph A. (Electrical Engineering, 2013-03-20)Biomarkers have become an integral part of oil exploration. Gas Chromatography (-Mass Spectrometry) is performed to an oil sample to acquire biomarkers from the sample. The presence, lack of, or abundance of a given compound ... -
Design Of An Enhanced Translinear Variable Floating Resistor And Its Application In A VGA
Jagannathan, Nithya (Electrical Engineering, 2008-08-08)An improved current controlled floating resistor is designed based on translinear loops for application in a Variable Gain Amplifier (VGA). This work compares the use of two different devices and evaluates the difference ... -
Distributed Model For Thermal Characterization Of Oxide Isolated Silicon Germanium Heterojunction Bipolar Transistors
Patil, Sharath (Electrical Engineering, 2011-07-14)Demand for high-speed and cost-effective devices has resulted in the development of smaller, high frequency devices. Since semiconductor devices are getting smaller, self-heating effects have become more important. This ... -
Estimation Of Thermal Impedance Parameters Of Silicon Germanium Heterojunction Bipolar Transistors
Karingada, Arun Thomas (Electrical Engineering, 2011-07-14)Silicon Germanium (SiGe) hetero junction bipolar transistors (HBTs) are used in a variety of circuits like analog mixed signal and RF(radio frequency ) circuits. As the device gets smaller these days the self heating affects ... -
Low Phase Noise Voltage-controlled Oscillator Design
Zhu, Zhipeng (Electrical Engineering, 2007-08-23)Two kinds of voltage-controlled oscillators (VCO) - active inductor based VCO and LC cross-coupled VCO - are studied in this work. Although the phase noise performance is not competitive, the proposed active inductor based ... -
Modeling And Characterization Of The Insulated Gate Bipolar Transistor In The Near-threshold Region
Vandrevala, Farah P. (Electrical Engineering, 2013-07-22)The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up ... -
Power Management Integrated Circuits Design, Functionality Analysis And Applications
Li, Zheng (Electrical Engineering, 2007-08-23)Power management is playing a significant role in modern electronics. Good power management is especially important for portable devices that rely on batteries. By smartly managing how the power is directed to different ... -
Power-Derived Thermal Characterization of SiGe HBTs and Design of Timing Circuit using a Phase Locked-Loop
Shah, Valay Dineshbhai; 0000-0003-1355-1787 (2016-05-24)Silicon Germanium (SiGe) hetero-junction bipolar transistors (HBTs) have been designed to cater the demand of high speed circuits having speed applications in wireless, optical communication and space electronics. Due to ... -
The Self-heating Effects Of Bipolar Juction Transistors On The Functionality Of A Current Feedback Amplifier
Xie, Xuesong (Electrical Engineering, 2010-11-01)Self-heating effects strongly affect the performance of modern silicon-on-insulator (SOI) bipolar junction transistors. This research work does an extensive analysis of self-heating effects on large-signal behavior, ... -
Temperature And Frequency Dependence Of Thermal Impedance In Dielectrically Isolated SiGe HBTs
Shah, Valay Dineshbhai (Electrical Engineering, 2011-07-14)Silicon Germanium (SiGe) heterojunction bipolar transistors (HBTs) have been designed to cater the demand of high speed circuits having applications in wireless and optical communication. Due to higher cut-off frequencies ... -
Thermal Characterization Of Dielectrically Isolated Bipolar Junction Transistor
Kim, Daewoo (Electrical Engineering, 2009-09-16)Since the integrated circuit (IC) was invented in 1960, the operating speed of semiconductor devices has steadily increased and the number of semiconductor devices in an IC chip has grown by a size reduction of the devices. ... -
Thermal Effects And Analysis Of High Frequency Devices In Analog Integrated Circuit Design
Rahman, Ardasheir Sayek (Electrical Engineering, 2013-03-20)Heterojunction Bipolar Junction Transistors (HBTs) are used in various high frequency applications in modern day technology. These devices produce high trans-conductance which is need for high frequency application. Their ... -
Thermal Effects And Analysis On Analog Integrated Circuit Design
Rahman, Ardasheir Sayek (Electrical Engineering, 2009-09-16)Analog circuit design is an art of circuit designing. With technology becoming more advance and size of devices shrinking, circuit designing has becoming a real chance for the designers to meet up the demands in the market. ... -
The Thermal Effects Of Self Heating Of Transistors On Analog Amplifier Design And Evaluation
Sinha, Kamal Ranjan (Electrical Engineering, 2009-09-16)Electrothermal effects play a major role in the performance of modern silicon-on-insulator (SOI) bipolar junction transistors (BJTs). This research work examines the influence of electrothermal feedback within a single ... -
Thermal Effects On Analog Integrated Circuit Design
Hossain, Md Mahbub (Electrical Engineering, 2007-08-23)Analog Integrated Circuit design (IC) is a big challenge in this modern age. Thermal effect has a substantial role in analog ICs performance. Thermal effects on analog IC design have been investigated in this dissertation ... -
Viscosity and surface-free energy effects in thermal shrinking of solid-state nanopores
Iqbal, Samir M.; Asghar, Waseem; Billo, Joseph A.; Carter, Ronald L.; Jones, Jared (American Institute of Physics;Department of Electrical Engineering, University of Texas at Arlington, 2012-06-05)Solid-state nanopores are fabricated by either drilling these in thin membranes or by shrinking large pores with electron/ion beam. Simple heating of thin membranes with many large pores has been shown recently to controllably ...