Browsing Department of Electrical Engineering by Author "Kirk, Wiley P."

Now showing items 1-5 of 5

    • Fabrication Of A Silicon Single Electron Transistor 

      Chinoy, Sharukh Roomy (Electrical Engineering, 2007-09-17)
      Single electronics has bright prospects because of its high scalability. The single electron transistor (SET) which utilizes these principles could replace the current workhorse of the industry, the MOSFET. The SET is ...

    • Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials 

      Agrawal, Rakshit (Electrical Engineering, 2007-08-23)
      Scaling of MOSFETS has led to leakage current problems in SiO2 dielectric based MOSFETS. This has led to the introduction of high-k dielectric materials which can afford greater physical thickness and achieve the same ...

    • Simulation And Characterization Of ZnSe/BeTe Resonant Tunneling Diode On Silicon 

      Davis, Moshe (Electrical Engineering, 2007-08-23)
      ZnSe/BeTe resonant tunneling diodes were grown on silicon with a ZnxBe1-xTe buffer layer using MBE (Molecular Beam epitaxy).These devices were processed and characterized. The devices showed multiple NDR (negative differential ...

    • Simulation And E-beam Patterning Of Single Electron Transistor 

      Deep, Karan (Electrical Engineering, 2007-08-23)
      Electron beam lithography is gaining widespread use as semiconductor industry. Current optical lithography techniques are limited to resolution of few hundreds of nanometers and suffer from diffraction problems. The focus ...

    • Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001) 

      Tao, Meng; Xu, Yuqing; Kirk, Wiley P.; Maldonado, Eduardo; Udeshi, Darshak (AIPDepartment of Electrical Engineering, NanoFAB Center, University of Texas at ArlingtonTexas Instruments, 2004-01-26)
      The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...