Browsing Department of Electrical Engineering by Subject "Schottky diodes"
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Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
(AIPDepartment of Electrical Engineering, 2007-05-21)Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ...