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Fabrication, Characterization And Hall Mobility Analysis Of MOS Devices With Low-k And High-k Dielectric Materials
(Electrical Engineering, 2007-08-23)
Scaling of MOSFETS has led to leakage current problems in SiO2 dielectric based MOSFETS. This has led to the introduction of high-k dielectric materials which can afford greater physical thickness and achieve the same ...
Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
(AIP, 2007-05-21)
Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ...