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dc.contributor.advisorJung, Sungyong
dc.creatorChilukuri, Manu
dc.date.accessioned2016-01-26T22:43:47Z
dc.date.available2016-01-26T22:43:47Z
dc.date.created2015-12
dc.date.issued2015-12-01
dc.date.submittedDecember 2015
dc.identifier.urihttp://hdl.handle.net/10106/25434
dc.description.abstractIn this thesis, a low power, high frequency memristor emulator has been designed. The purpose of emulator circuit is to mimic the behavior of a memristor. The circuit consists of a summing amplifier, an integrator and a multiplier. The circuit has been implemented using commercial off the shelf (COTS) components in Keysight ADS simulation tool. For CMOS implementation, the emulator circuit has been designed using IBM 0.18um technology. The design of each circuit has been explained in this work. The Opamp designed achieves a gain of 89 dB, output swing of 1.584V and a bandwidth of 3.67 MHz. The circuit designed using Cadence Spectre provides results consistent with the block level simulation. From the simulations, it is observed that the circuit exhibits memristive behavior up to 16 kHz, after which the circuit behaves as a simple resistor. This circuit can be used to compensate process variations in amplifiers, can be programmed to required resistance values by applying a train of pulses with proper count, amplitude and duration
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.subjectMemristor
dc.subjectIntegrator
dc.subjectGilbert cell multiplier
dc.subjectOpamp
dc.titleA High Frequency Memristor Emulator Circuit
dc.typeThesis
dc.date.updated2016-01-26T22:43:50Z
thesis.degree.departmentElectrical Engineering
thesis.degree.grantorThe University of Texas at Arlington
thesis.degree.levelMasters
thesis.degree.nameMaster of Science in Electrical Engineering
dc.type.materialtext


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