Depth-Resolved Defect Characterization of Multi-Layer Thin-Film Semiconductor Materials via Positron Annihilation Spectroscopy

dc.contributor.advisor	Koymen, Ali
dc.creator	Driscoll, Jack
dc.date.accessioned	2024-01-31T18:40:31Z
dc.date.available	2024-01-31T18:40:31Z
dc.date.created	2023-12
dc.date.issued	2023-12-15
dc.date.submitted	December 2023
dc.identifier.uri	http://hdl.handle.net/10106/31962
dc.description.abstract	Positron annihilation spectroscopy has frequently been used to perform depth-resolved defect characterization. In this thesis, the application of UTA's advanced positron beam to conduct depth-resolved defect studies on multi-layer semiconductor thin-film materials is demonstrated.
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject	Semiconductor
dc.subject	Positron
dc.subject	Defect
dc.title	Depth-Resolved Defect Characterization of Multi-Layer Thin-Film Semiconductor Materials via Positron Annihilation Spectroscopy
dc.type	Thesis
dc.date.updated	2024-01-31T18:40:31Z
thesis.degree.department	Physics
thesis.degree.grantor	The University of Texas at Arlington
thesis.degree.level	Masters
thesis.degree.name	Master of Science in Physics
dc.type.material	text
dc.creator.orcid	0009-0003-6387-9729