Browsing Department of Electrical Engineering by Subject "Elemental semiconductors"
Now showing items 1-5 of 5
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Colloidal quantum dot absorption enhancement in flexible Fano filters
(IEEE, 2010-02-25)We report here modified absorption property of colloidal quantum dots CQDs inside flexible Fano filters—made of patterned single crystalline silicon nanomembrane transferred onto flexible plastic substrates. Enhanced ... -
Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
(AIPDepartment of Electrical Engineering, 2007-05-21)Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ... -
Resonance control of membrane reflectors with effective index engineering
(IEEE, 2009-07-14)We report here broadband membrane reflectors based on Fano resonances in patterned silicon nanomembranes. Resonance control of the reflectors was realized either by partially removing buried oxide layer underneath the ... -
Solution-processed omnidirectional antireflection coatings on amorphous silicon solar cells
(Original publisher: Journal of Applied PhysicsUniversity of Texas at ArlingtonDepartment of Electrical Engineering, NanoFAB Center, 2009-05)Solution-processed spherical surface textures are demonstrated on commercial amorphous silicon solar cells. The texture is formed with a monolayer of silica microspheres by convective coating, followed by a spin-on-glass ... -
Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)
(AIPDepartment of Electrical Engineering, NanoFAB Center, University of Texas at ArlingtonTexas Instruments, 2004-01-26)The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...