Browsing Publications - DO NOT EDIT by Subject "Annealing"
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Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)
(AIPDepartment of Electrical Engineering, NanoFAB Center, University of Texas at ArlingtonTexas Instruments, 2004-01-26)The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...