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Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole
(AIP, 2007-05-21)
Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy ...
Thermal stability of ohmic contacts between Ti and Se-passivated n-type Si(001)
(AIP, 2004-01-26)
The thermal stability of the interface between Ti and Se-passivated n-type Si(001) is investigated. As-deposited Ti contacts show ohmic characteristics. After annealing at temperatures from 200 °C to 480 °C in air, the ...