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dc.contributor.author | Tao, Meng | |
dc.contributor.author | Ali, Muhammad Yusuf | |
dc.date.accessioned | 2010-10-14T18:47:58Z | |
dc.date.available | 2010-10-14T18:47:58Z | |
dc.date.issued | 2007-05-21 | |
dc.identifier.citation | Published in: Journal Of Applied Physics | en_US |
dc.identifier.uri | http://hdl.handle.net/10106/5085 | |
dc.description.abstract | Aluminum and nickel contacts were prepared by evaporation on sulfur-passivated n- and p-type Si(100) substrates. The Schottky diodes were characterized by current-voltage, capacitance-voltage, and activation-energy measurements. Due to the passivation of Si dangling bonds by S, surface states are reduced to a great extent and Schottky barriers formed by Al and Ni on Si(100) substrates show greater sensitivity to their respective work functions. Aluminum, a low work function metal, shows a barrier height of ≪0.11 eV on S-passivated n-type Si(100) and ∼0.80 eV on S-passivated p-type Si(100), as compared to 0.56 and ∼0.66 eV for nonpassivated n- and p-type Si(100), respectively. Nickel, a high work function metal, shows ∼0.72 and ∼0.51 eV on S-passivated n and p-type Si(100), respectively, as compared to ∼0.61 and ∼0.54 eV on nonpassivated n and p-type Si(100), respectively. Though a surface dipole forms due to the adsorption of S on Si(100), our experimental results indicate that the effect of surface states is the dominant factor in controlling the Schottky barrier height in these metal-Si systems. | en_US |
dc.description.sponsorship | Supported by the National Science
Foundation under Grant Nos. 0322762 and 0620319 and the
Texas Advanced Technology Program under Grant No.
003656-0096. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AIP | en_US |
dc.subject | Adsorption | en_US |
dc.subject | Dangling bonds | en_US |
dc.subject | Electrical contacts | en_US |
dc.subject | Elemental semiconductors | en_US |
dc.subject | Passivation | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Schottky diodes | en_US |
dc.subject | Semiconductor-metal boundaries | en_US |
dc.subject | Substrates | en_US |
dc.subject | Sulphur | en_US |
dc.subject | Surface states | en_US |
dc.title | Effect of sulfur passivation of silicon „100… on Schottky barrier height: Surface states versus surface dipole | en_US |
dc.type | Article | en_US |
dc.publisher.department | Department of Electrical Engineering | en |
dc.identifier.externalLink | https://www.uta.edu/ra/real/editprofile.php?pid=291&onlyview=1 | en_US |
dc.identifier.externalLinkDescription | Link to Research Profiles | en_US |
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