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dc.contributor.authorTao, Meng
dc.contributor.authorWang, Longcheng
dc.contributor.authorZhang, Qiming
dc.contributor.authorWu, Dangxin
dc.contributor.authorWang, Weichao
dc.date.accessioned2010-10-22T14:57:12Z
dc.date.available2010-10-22T14:57:12Z
dc.date.issued2010-06-28
dc.identifier.urihttp://hdl.handle.net/10106/5100
dc.description.abstractThe formation of native point defects in cuprous oxide, Cu2O, synthesized from solution has been studied by first-principles calculations. Although p-type conduction is obtained in Cu2O synthesized from vacuum regardless of copper-rich or oxygen-rich conditions, intrinsically n-type Cu2O without doping can be grown in a strong acidic environment from solution. Our calculations show that both n-type and p-type Cu2O can be obtained depending on the solution pH value, which are in good agreement with our experimental results.en_US
dc.description.sponsorshipSupported by the U.S. Department of Energy, Office of Basic Energy Sciences, and Division of Materials Sciences and Engineering under Award No. DESC0002062.en_US
dc.language.isoen_USen_US
dc.publisherAIP;en_US
dc.subjectab initio calculationsen_US
dc.subjectcopper compoundsen_US
dc.subjectcrystal growth from solutionen_US
dc.subjectpHen_US
dc.subjectpoint defectsen_US
dc.titlepH-dependence of conduction type in cuprous oxide synthesized from solutionen_US
dc.typeArticleen_US
dc.publisher.departmentDepartment of Physics, University of Texas at Arlingtonen
dc.publisher.departmentDepartment of Electrical Engineering, University of Texas at Arlingtonen
dc.identifier.externalLinkhttps://www.uta.edu/ra/real/editprofile.php?pid=291&onlyview=1en_US
dc.identifier.externalLinkDescriptionLink to Research Profilesen_US


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